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| HGTD3N60B3S, HGT1S3N60B3S, HGTP3N60B3 Data Sheet December 2001 7A, 600V, UFS Series N-Channel IGBTs The HGTD3N60B3S, HGT1S3N60B3S and HGTP3N60B3 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors. Formerly Developmental Type TA49192. Features * 7A, 600V, TC = 25oC * 600V Switching SOA Capability * Typical Fall Time. . . . . . . . . . . . . . . . 115ns at TJ = 150oC * Short Circuit Rating * Low Conduction Loss Packaging JEDEC TO-220AB E COLLECTOR (FLANGE) C G Ordering Information PART NUMBER HGTD3N60B3S HGT1S3N60B3S HGTP3N60B3 PACKAGE TO-252AA TO-263AB TO-220AB BRAND G3N60B G3N60B3 G3N60B3 G E COLLECTOR (FLANGE) JEDEC TO-263AB NOTE: When ordering, use the entire part number. Add the suffix 9A to obtain the TO-252AA and TO-263AB variant in tape and reel, e.g. HGTD3N60B3S9A. Symbol JEDEC TO-252AA C G G E E COLLECTOR (FLANGE) INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS 4,364,073 4,598,461 4,682,195 4,803,533 4,888,627 4,417,385 4,605,948 4,684,413 4,809,045 4,890,143 4,430,792 4,620,211 4,694,313 4,809,047 4,901,127 4,443,931 4,631,564 4,717,679 4,810,665 4,904,609 4,466,176 4,639,754 4,743,952 4,823,176 4,933,740 4,516,143 4,639,762 4,783,690 4,837,606 4,963,951 4,532,534 4,641,162 4,794,432 4,860,080 4,969,027 4,587,713 4,644,637 4,801,986 4,883,767 (c)2001 Fairchild Semiconductor Corporation HGTD3N60B3S, HGT1S3N60B3S, HGTP3N60B3 Rev. B HGTD3N60B3S, HGT1S3N60B3S, HGTP3N60B3 Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified HGTD3N60B3S, HGT1S3N60B3S HGTP3N60B3 Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVCES Collector Current Continuous At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25 At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110 Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM Switching Safe Operating Area at TJ = 150oC (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . SSOA Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Reverse Voltage Avalanche Energy . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E ARV Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Short Circuit Withstand Time (Note 2) at VGE = 12V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . tSC Short Circuit Withstand Time (Note 2) at VGE = 10V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . tSC 7.0 3.5 20 20 30 18A at 600V 33.3 0.27 100 -55 to 150 260 5 10 W W/oC mJ oC oC UNITS V A A A V V 600 s s CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTES: 1. Pulse width limited by maximum junction temperature. 2. VCE(PK) = 360V, TJ = 125oC, RG = 82. Electrical Specifications PARAMETER TC = 25oC, Unless Otherwise Specified SYMBOL BVCES BVECS ICES TEST CONDITIONS IC = 250A, VGE = 0V IC = 10mA, VGE = 0V VCE = BVCES TC = 25oC TC = 150oC TC = 25oC TC = 150oC MIN 600 20 4.5 VCE = 600V 18 TYP 28 1.8 2.1 5.4 MAX 250 2.0 2.1 2.5 6.0 250 UNITS V V A mA V V V nA A Collector to Emitter Breakdown Voltage Emitter to Collector Breakdown Voltage Collector to Emitter Leakage Current Collector to Emitter Saturation Voltage VCE(SAT) IC = IC110, VGE = 15V Gate to Emitter Threshold Voltage Gate to Emitter Leakage Current Switching SOA VGE(TH) IGES SSOA IC = 250A, VCE = VGE VGE = 20V TJ = 150oC RG = 82 VGE = 15V L = 500H Gate to Emitter Plateau Voltage On-State Gate Charge VGEP Qg(ON) IC = IC110, VCE = 0.5 BVCES IC = IC110, VCE = 0.5 BVCES VGE = 15V VGE = 20V - 7.9 18 21 18 16 105 70 66 88 22 25 75 160 V nC nC ns ns ns ns J J Current Turn-On Delay Time Current Rise Time Current Turn-Off Delay Time Current Fall Time Turn-On Energy Turn-Off Energy (Note 3) td(ON)I trI td(OFF)I tfI EON EOFF IGBT and Diode at TJ = 25oC ICE = IC110 VCE = 0.8 BVCES VGE = 15V RG = 82 L = 1mH Test Circuit (Figure 17) (c)2001 Fairchild Semiconductor Corporation HGTD3N60B3S, HGT1S3N60B3S, HGTP3N60B3 Rev. B HGTD3N60B3S, HGT1S3N60B3S, HGTP3N60B3 Electrical Specifications PARAMETER Current Turn-On Delay Time Current Rise Time Current Turn-Off Delay Time Current Fall Time Turn-On Energy Turn-Off Energy (Note 3) Thermal Resistance Junction To Case NOTE: 3. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending at the point where the collector current equals zero (ICE = 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss. Turn-On losses include losses due to diode recovery. TC = 25oC, Unless Otherwise Specified (Continued) SYMBOL td(ON)I trI td(OFF)I tfI EON EOFF RJC TEST CONDITIONS IGBT and Diode at TJ = 150oC ICE = IC110 VCE = 0.8 BVCES VGE = 15V RG = 82 L = 1mH Test Circuit (Figure 17) MIN TYP 16 18 220 115 130 210 MAX 295 175 140 325 3.75 UNITS ns ns ns ns J J oC/W Typical Performance Curves 7 ICE , DC COLLECTOR CURRENT (A) Unless Otherwise Specified ICE, COLLECTOR TO EMITTER CURRENT (A) 20 18 16 14 12 10 8 6 4 2 0 0 100 200 300 400 500 600 700 VCE, COLLECTOR TO EMITTER VOLTAGE (V) VGE = 15V 6 5 4 3 2 1 0 25 50 75 100 125 150 TC , CASE TEMPERATURE (oC) TJ = 150oC, RG = 82, VGE = 15V, L = 500H FIGURE 1. DC COLLECTOR CURRENT vs CASE TEMPERATURE FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA fMAX, OPERATING FREQUENCY (kHz) TJ = 150oC, RG = 82, L = 1mH, V CE = 480V TC 75oC 75oC 110oC 110oC VGE 15V 10V 15V 10V 100 VCE = 360V, RG = 82, TJ = 125oC 14 ISC 12 10 8 tSC 6 4 10 11 12 13 14 VGE , GATE TO EMITTER VOLTAGE (V) 20 15 15 40 35 30 25 10 fMAX1 = 0.05/(td(OFF)I + td(ON)I) fMAX2 = (PD - PC)/(EON + EOFF) PC = CONDUCTION DISSIPATION (DUTY FACTOR = 50%) ROJC = 3.75oC/W, SEE NOTES 1 2 3 4 5 6 7 8 1 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO EMITTER CURRENT FIGURE 4. SHORT CIRCUIT WITHSTAND TIME (c)2001 Fairchild Semiconductor Corporation HGTD3N60B3S, HGT1S3N60B3S, HGTP3N60B3 Rev. B ISC , PEAK SHORT CIRCUIT CURRENT (A) 200 tSC , SHORT CIRCUIT WITHSTAND TIME (s) 16 45 HGTD3N60B3S, HGT1S3N60B3S, HGTP3N60B3 Typical Performance Curves ICE, COLLECTOR TO EMITTER CURRENT (A) 14 12 10 TC = 150oC 8 6 TC = 25oC 4 2 0 0 1 2 3 4 5 6 7 8 9 10 VCE , COLLECTOR TO EMITTER VOLTAGE (V) DUTY CYCLE <0.5%, VGE = 10V PULSE DURATION = 250s Unless Otherwise Specified (Continued) ICE, COLLECTOR TO EMITTER CURRENT (A) 30 DUTY CYCLE <0.5%, VGE = 15V PULSE DURATION = 250s 25 20 15 10 TC = 25oC 5 0 0 1 2 3 4 5 6 7 8 9 10 VCE, COLLECTOR TO EMITTER VOLTAGE (V) TC = 150oC TC = -55oC TC = -55oC FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE 0.7 0.6 0.5 0.4 0.3 0.2 0.1 TJ = 25oC, TJ = 150oC, VGE = 15V 0 1 2 3 4 5 6 7 8 ICE , COLLECTOR TO EMITTER CURRENT (A) EOFF, TURN-OFF ENERGY LOSS (mJ) EON , TURN-ON ENERGY LOSS (mJ) RG = 82, L = 1mH, VCE = 480V TJ = 25oC, TJ = 150oC, VGE = 10V 0.6 RG = 82, L = 1mH, VCE = 480V 0.5 TJ = 150oC; VGE = 10V OR 15V 0.4 0.3 0.2 0.1 0 1 2 3 4 5 6 7 8 ICE , COLLECTOR TO EMITTER CURRENT (A) TJ = 25oC; VGE = 10V OR 15V FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO EMITTER CURRENT FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTOR TO EMITTER CURRENT 80 45 RG = 82, L = 1mH, V CE = 480V tdI , TURN-ON DELAY TIME (ns) 40 35 30 25 20 15 TJ = 25oC, TJ = 150oC, VGE = 15V 10 TJ = 25oC, TJ = 150oC, VGE = 10V trI , RISE TIME (ns) RG = 82, L = 1mH, VCE = 480V 70 60 50 40 TJ = 25oC, TJ = 150oC, VGE = 15V 30 20 10 TJ = 25oC, TJ = 150oC, VGE = 10V 1 2 3 4 5 6 7 8 1 2 3 4 5 6 7 8 ICE , COLLECTOR TO EMITTER CURRENT (A) ICE , COLLECTOR TO EMITTER CURRENT (A) FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO EMITTER CURRENT FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO EMITTER CURRENT (c)2001 Fairchild Semiconductor Corporation HGTD3N60B3S, HGT1S3N60B3S, HGTP3N60B3 Rev. B HGTD3N60B3S, HGT1S3N60B3S, HGTP3N60B3 Typical Performance Curves 250 td(OFF)I , TURN-OFF DELAY TIME (ns) RG = 82, L = 1mH, VCE = 480V 225 200 175 TJ = 150oC, VGE = 10V 150 125 100 TJ = 25oC, VGE = 10V 75 60 1 2 3 4 5 6 7 8 ICE , COLLECTOR TO EMITTER CURRENT (A) 1 2 3 4 5 6 7 8 TJ = 25oC, VGE = 15V TJ = 150oC, VGE = 15V tfI , FALL TIME (ns) Unless Otherwise Specified (Continued) 140 RG = 82, L = 1mH, VCE = 480V 120 TJ = 150oC, VGE = 10V OR 15V 100 80 TJ = 25oC, VGE = 10V OR 15V ICE , COLLECTOR TO EMITTER CURRENT (A) FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO EMITTER CURRENT FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER CURRENT ICE, COLLECTOR TO EMITTER CURRENT (A) 30 PULSE DURATION = 250s 25 TC = -55oC 20 15 10 5 0 5 6 7 8 9 10 11 VGE , GATE TO EMITTER VOLTAGE (V) TC = 25oC 15 Ig(REF) = 1mA, RL = 171, TC = 25oC 12 9 TC = 150oC 6 VCE = 200V VCE = 400V VCE = 600V 3 0 12 13 14 15 0 5 10 15 20 25 VGE , GATE TO EMITTER VOLTAGE (V) Qg , GATE CHARGE (nC) FIGURE 13. TRANSFER CHARACTERISTIC FIGURE 14. GATE CHARGE WAVEFORM 500 FREQUENCY = 1MHz 400 C, CAPACITANCE (pF) CIES 300 200 COES 100 CRES 0 0 5 10 15 20 25 VCE, COLLECTOR TO EMITTER VOLTAGE (V) FIGURE 15. CAPACITANCE vs COLLECTOR TO EMITTER VOLTAGE (c)2001 Fairchild Semiconductor Corporation HGTD3N60B3S, HGT1S3N60B3S, HGTP3N60B3 Rev. B HGTD3N60B3S, HGT1S3N60B3S, HGTP3N60B3 Typical Performance Curves ZJC , NORMALIZED THERMAL RESPONSE Unless Otherwise Specified (Continued) 100 0.5 0.2 10-1 0.1 0.05 0.02 0.01 SINGLE PULSE 10-2 10-5 10-4 10-3 DUTY FACTOR, D = t1 / t2 PEAK TJ = (PD X ZJC X RJC) + TC 10-2 10-1 t1 PD t2 100 101 t1 , RECTANGULAR PULSE DURATION (s) FIGURE 16. NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE Test Circuit and Waveform L = 1mH RHRD460 90% VGE EOFF VCE + 90% VDD = 480V ICE 10% td(OFF)I tfI tfI td(ON)I 10% EON RG = 82 - FIGURE 17. INDUCTIVE SWITCHING TEST CIRCUIT FIGURE 18. SWITCHING TEST WAVEFORMS (c)2001 Fairchild Semiconductor Corporation HGTD3N60B3S, HGT1S3N60B3S, HGTP3N60B3 Rev. B HGTD3N60B3S, HGT1S3N60B3S, HGTP3N60B3 Handling Precautions for IGBTs Insulated Gate Bipolar Transistors are susceptible to gateinsulation damage by the electrostatic discharge of energy through the devices. When handling these devices, care should be exercised to assure that the static charge built in the handler's body capacitance is not discharged through the device. With proper handling and application procedures, however, IGBTs are currently being extensively used in production by numerous equipment manufacturers in military, industrial and consumer applications, with virtually no damage problems due to electrostatic discharge. IGBTs can be handled safely if the following basic precautions are taken: 1. Prior to assembly into a circuit, all leads should be kept shorted together either by the use of metal shorting springs or by the insertion into conductive material such as "ECCOSORBDTM LD26" or equivalent. 2. When devices are removed by hand from their carriers, the hand being used should be grounded by any suitable means - for example, with a metallic wristband. 3. Tips of soldering irons should be grounded. 4. Devices should never be inserted into or removed from circuits with power on. 5. Gate Voltage Rating - Never exceed the gate-voltage rating of VGEM . Exceeding the rated VGE can result in permanent damage to the oxide layer in the gate region. 6. Gate Termination - The gates of these devices are essentially capacitors. Circuits that leave the gate opencircuited or floating should be avoided. These conditions can result in turn-on of the device due to voltage buildup on the input capacitor due to leakage currents or pickup. 7. Gate Protection - These devices do not have an internal monolithic Zener diode from gate to emitter. If gate protection is required an external Zener is recommended. Operating Frequency Information Operating frequency information for a typical device (Figure 3) is presented as a guide for estimating device performance for a specific application. Other typical frequency vs collector current (ICE) plots are possible using the information shown for a typical unit in Figures 5, 6, 7, 8, 9 and 11. The operating frequency plot (Figure 3) of a typical device shows fMAX1 or fMAX2 ; whichever is smaller at each point. The information is based on measurements of a typical device and is bounded by the maximum rated junction temperature. fMAX1 is defined by fMAX1 = 0.05/(td(OFF)I+ td(ON)I). Deadtime (the denominator) has been arbitrarily held to 10% of the on-state time for a 50% duty factor. Other definitions are possible. td(OFF)I and td(ON)I are defined in Figure 18. Device turn-off delay can establish an additional frequency limiting condition for an application other than T JM. td(OFF)I is important when controlling output ripple under a lightly loaded condition. fMAX2 is defined by fMAX2 = (PD - PC)/(EOFF + EON). The allowable dissipation (PD) is defined by PD = (TJM - TC)/RJC . The sum of device switching and conduction losses must not exceed PD. A 50% duty factor was used (Figure 3) and the conduction losses (P C) are approximated by PC = (VCE x ICE)/2. EON and EOFF are defined in the switching waveforms shown in Figure 18. EON is the integral of the instantaneous power loss (ICE x VCE) during turn-on and EOFF is the integral of the instantaneous power loss (ICE x VCE) during turn-off. All tail losses are included in the calculation for EOFF ; i.e., the collector current equals zero (ICE = 0). (c)2001 Fairchild Semiconductor Corporation HGTD3N60B3S, HGT1S3N60B3S, HGTP3N60B3 Rev. B |
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